Polycrystalline Materials

Polycrystalline ingots are produced by reacting at least 99.9999% (6N) pure elements together. The resulting stoichiometric compounds are then shaped, cleaned and individually packaged.

Both ends of each ingot are routinely assessed by Hall/Van der Pauw measurements to provide full electrical characterisation. Each synthesised batch is supplied with a complete Certificate of Conformance. Glow Discharge Mass Spectrographic (GDMS) purity analyses are performed on a sampling basis.

INDIUM PHOSPHIDE

Undoped, high purity InP is multiply refined and synthesised in a horizontal high pressure (HHP) furnace resulting in a polycrystalline ingot which can be supplied in ingot/ingot sections, slices or crushed granules.

InP Ingot Specifications

GALLIUM ARSENIDE

Undoped, high purity GaAs is synthesised in a horizontal ingot form which can be supplied in ingot/ingot sections, slices or crushed granules.

GaAs Ingot Specifications

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