InP - Indium Phosphide

Wafer Technology offers single crystals that are grown in a pure fused silica system by the Czochralski method from multiple zone refined polycrystalline ingot.


Indium Phosphide can be supplied in as-cut, etched or polished wafer forms. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability.

Indium Phosphide (InP)


Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. Higher index substrates of the type (n,1,1) where n = 1,2,3,4,5,6 etc and orientations such as (110) are also available. We also offer wafers with cut and/or cleaved flats.


All wafers are offered with high quality epitaxy ready finishing. Surfaces are characterised by in-house, advanced optical metrology techniques which include Surfscan haze and particle monitoring, spectroscopic ellipsometry and grazing incidence interferometry.


Polished Wafers

coin-style tray, individually sealed in two outer bags in inert atmosphere. Cassette shipments are available on request).

As-cut Wafers

Cassette shipment. (Glassine bag available on request).

'Process Trial' wafers

Packaged in coin-style wafer shipper, individually sealed in one outer bag.

If you do not see the specification you require, please call for details on +44 (0)1908 210444 or email

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Indium Phosphide (InP) Specifications