InAs Indium Arsenide

Wafer Technology offers single crystals that are grown in a high pressure liquid encapsulated Czochralski process using at least 99.9999% (6N) pure Indium and Arsenic in pure fused silica crucibles.


Indium Arsenide can be supplied as ingot sections or as-cut, etched or polished wafers. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability.

Indium Antimonide (InAs)


Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. Higher index substrates of the type (n,1,1) where n = 1,2,3,4,5,6 etc and orientations such as (110) are also available. We also offer wafers with cut and/or cleaved flats.


All wafers are offered with high quality epitaxy ready finishing. Surfaces are characterised by in-house, advanced optical metrology techniques which include Surfscan haze and particle monitoring, spectroscopic ellipsometry and grazing incidence interferometry.


Polished Wafers

coin-style tray, individually sealed in two outer bags in inert atmosphere. Cassette shipments are available on request).

As-cut Wafers

Cassette shipment. (Glassine bag available on request).

'Process Trial' wafers

Packaged in coin-style wafer shipper, individually sealed in one outer bag.

If you do not see the specification you require, please call for details on +44 (0)1908 210444 or email

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Indium Arsenide (InAs) Specifications