Higher Accuracy Orientations / Cleaved Flats
Surface orientation can be measured
to an accuracy of ± 0.02º using a triple axis X-ray
diffractometer system. Substrates can also be supplied with
very precise misorientations in any direction from the growth
plane - please ask for the orientation you require. We also
offer wafers with cleaved flats.
Due to material losses in re-orienting,
non-standard orientations may be subject to minimum order
requirements.
Novel Indices
Higher index substrates of the
type (x, 1, 1) where x = 1, 2, 3, 4, 5, 6 etc.
and orientations
such as (110) are available for most materials - please ask
for the orientation you require.
Due to material losses in re-orienting,
non-standard orientations may be subject to minimum order
requirements.
"Low Boron" VGF Silicon Doped Gallium Arsenide
Two inch diameter Silicon doped
material is available grown by a modified technique which
produces material with a much lower boron concentration than
competitive VGF grown material.
“Process Trial” Grade Wafers
Suitable for use as sacrificial test
wafers in multi-wafer epitaxy reactors, process monitoring,
machine set-up, etching experiments and a variety of other less
critical applications.
Please ask for specific requirements.
Ultra Thin Wafers
Extremely thin (150 µm) gallium
arsenide (2”, 3” and 4”) or indium phosphide
(2” and 3”) spacer wafers are available for laser
facet coating applications.
Wafers of this thickness are not
finished to our usual “epi-ready” surface standards
-
please ask for more details.
Optical Blanks
Circular blanks for further processing
into optical lenses are available in a variety of diameters
and thicknesses.
Seed Crystals For Bulk Crystal Growth
Seeds of various dimensions can be
supplied with pre-cut grooves
ready for use in standard seed chucks - please ask for the size
you require.
Non-standard seed sizes may be subject
to minimum order requirements. |
