*Please choose a material:
GaAs-u/d (semi-insulating, un-doped)
GaAs-Si (n-type)
GaAs-Zn (p-type)
InP-u/d (un-doped)
InP-Fe (semi-insulating)
InP-S (n-type)
InP-Sn (n-type)
InP-Zn (p-type)
GaSb-u/d (p-type)
GaSb-Te (n-type)
GaSb-Zn (p-type)
InSb-u/d (n-type)
InSb-Te (n-type)
InSb-Ge (p-type)
InAs-u/d (n-type)
InAs-S (n-type)
InAs-Zn (p-type)
Sapphire wafers
Source Material (Ga, Al, In, Sb, As)
(please describe under 'special requests')
Wafer Product Size:
2”
3"
4"
Poly
Other (please describe below)
Growth Method:
Orientation:
Thickness:
Carrier Concentration:
Mobility:
Resistivity:
EPD:
Surface Finish:
As-Cut
Etched
Polished
One Side
Both sides
Grade:
Prime, Epitaxy Ready
Process Trial, Epitaxy Ready *
Mechanical, not Epitaxy Ready *
* Please note that not all of our products can be offered in these grades
Orientation Flats:
US
EJ
Other (please describe below)
Quantity:
Special Requests:
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